Processing chamber with multiple plasma units
US11955319B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2022 |
| Grant date | Apr 9, 2024 |
| Priority date | — |
| Expiry date | Jun 20, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.