Low-temperature plasma pre-clean for selective gap fill
US11955381B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2020 |
| Grant date | Apr 9, 2024 |
| Priority date | — |
| Expiry date | Oct 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32724
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.