Chemical mechanical polishing composition

US11993729B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Christian Daeschlein · Bochum, DE
• Max Siebert · Ludwigshafen, DE
• Yongqing Lan · Potsdam, US
• Michael Lauter · Mannheim, DE
• Sheik Ansar Usman Ibrahim · Waterloo, BE
• Reza Golzarian · Beaverton, US
• Te Yu Wei · Taoyuan, TW
• Haci Osman GUEVENC · Heidelberg, DE
• Julian Proelss · Allschwil, CH
• Leonardus Leunissen · Ludwigshafen, DE

Key dates

• Filing date: Nov 12, 2018
• Grant date: May 28, 2024
• Expiry date: Nov 12, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3212
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) composition comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.