Air gap spacer for metal gates
US12402403B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2022 |
| Grant date | Aug 26, 2025 |
| Priority date | — |
| Expiry date | Dec 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device that includes forming a trench adjacent to a gate structure to expose a contact surface of one of a source region and a drain region. A sacrificial spacer may be formed on a sidewall of the trench and on a sidewall of the gate structure. A metal contact may then be formed in the trench to at least one of the source region and the drain region. The metal contact has a base width that is less than an upper surface width of the metal contact. The sacrificial spacer may be removed, and a substantially conformal dielectric material layer can be formed on sidewalls of the metal contact and the gate structure. Portions of the conformally dielectric material layer contact one another at a pinch off region to form an air gap between the metal contact and the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.