Process for fabricating a low dielectric composite substrate
US5135595A · kind A · utility
Assignee
Inventors
- John Acocella
- Peter A. Agostino
- Arnold I. Baise
- Richard A. Bates
- Ray M. Bryant
- Jon A. Casey
- David R. Clarke
- George Czornyj
- Allen J. Dam
- Lawrence D. David
- Renuka S. Divakaruni
- Werner E. Dunkel
- Ajay P. Giri
- Liang-Choo Hsia
- James N. Humenik
- Steven M. Kandetzke
- Daniel P. Kirby
- John U. Knickerbocker
- Sarah H. Knickerbocker
- Anthony Mastreani
- Amy T. Matts
- Robert W. Nufer
- Charles H. Perry
- Srinivasa S. N. Reddy
- Salvatore J. Scilla
- Mark A. Takacs
- Lovell B. Wiggins
Key dates
| Filing date | Mar 30, 1990 |
| Grant date | Aug 4, 1992 |
| Priority date | — |
| Expiry date | Mar 30, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/308
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.