Patent · US Expired

Process for fabricating a low dielectric composite substrate

US5135595A · kind A · utility

19Cited by
3References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 30, 1990
Grant dateAug 4, 1992
Priority date
Expiry dateMar 30, 2010

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05K2203/308
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.