Copper reservoir for reducing electromigration effects associated with a conductive via in a semiconductor device
US5770519A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1995 |
| Grant date | Jun 23, 1998 |
| Priority date | — |
| Expiry date | Jun 5, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multilayer semiconductor structure includes a conductive via. The conductive via includes a reservoir of metal having a high resistance to electromigration. The reservoir is made from a conformal layer of copper, or gold deposited over the via to form a copper, or gold plug located in the via. A barrier layer is provided between the reservoir and an insulating layer to prevent the reservoir from diffusing into the insulating layer. The barrier layer and reservoir may be deposited by sputtering, collimated sputtering, chemical vapor deposition (CVD), dipping, evaporating, or by other means. The barrier layer and reservoir may be etched by anisotropic dry etching, plasma-assisted etching, or other layer removal techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.