Multi-zone RF inductively coupled source configuration
US6083344A · kind A · utility
287Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 1997 |
| Grant date | Jul 4, 2000 |
| Priority date | — |
| Expiry date | May 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.