Method for minimizing copper diffusion by doping an inorganic dielectric layer with a reducing agent
US6309982A · kind A · utility
4Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2001 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | Mar 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing copper diffusion into an inorganic dielectric layer adjacent to a copper structure by doping the inorganic dielectric layer with a reducing agent (e.g. phosphorous, sulfur, or both) during plasma enhanced chemical vapor deposition. The resulting doped inorganic dielectric layer can reduce copper diffusion without a barrier layer reducing fabrication cost and cycle time, as well as reducing RC delay.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.