Method to remove copper contamination by using downstream oxygen and chelating agent plasma
US6350689B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2001 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Apr 23, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of removing copper contamination from a semiconductor wafer, comprising the following steps. A semiconductor wafer having copper contamination thereon is provided. An oxidizing radical containing downstream plasma is provided from a first source (alternatively halogen (F2, Cl2, or Br2) may be used as on oxidizing agent). A vaporized chelating agent is provided from a second source. The oxidizing radical containing downstream plasma and vaporized chelating agent are mixed to form an oxidizing radical containing downstream plasma/vaporized chelating agent mixture. The mixture is directed to the copper contamination so that the mixture reacts with the copper contamination to form a volatile product. The volatile product is removed from the proximity of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.