Method of copper transport prevention by a sputtered gettering layer on backside of wafer
US6358821B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2000 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Jul 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of preventing copper transport on a semiconductor wafer, comprising the following steps. A semiconductor wafer having a front side and a backside is provided. Metal, selected from the group comprising aluminum, aluminum-copper, aluminum-silicon, and aluminum-copper-silicon is sputtered on the backside of the wafer to form a layer of metal. The back side sputtered aluminum layer may be partially oxidized at low temperature to further decrease the copper penetration possibility and to also provide greater flexibility in subsequent copper interconnect related processing. Once the back side layer is in place, the wafer can be processed as usual. The sputtered back side aluminum layer can be removed during final backside grinding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.