Process without post-etch cleaning-converting polymer and by-products into an inert layer
US6365508B1 · kind B1 · utility
5Cited by
15References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2000 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Jul 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new method to avoid post-etch cleaning in a metallization process is described. An insulating layer is formed over a first metal line in a dielectric layer overlying a semiconductor substrate. A via opening is etched through the insulating layer to the first metal line whereby a polymer forms on sidewalls of the via opening. The polymer is treated with a fluorinating agent whereby the polymer is converted to an inert layer. Thereafter, a second metal line is formed within the via opening wherein the inert layer acts is as a barrier layer to complete the metallization process in the fabrication of an integrated circuit device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.