Method to thin down copper barriers in deep submicron geometries by using alkaline earth element, barrier additives, or self assembly technique
US6391783B1 · kind B1 · utility
3Cited by
6References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 13, 2000 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Jul 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76867
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a metal plug, comprising the following steps. An etched dielectric layer, over a conductive layer, over a semiconductor structure are provided. The etched dielectric layer having a via hole and an exposed periphery. The etched dielectric layer is treated with at least one alkaline earth element source to form an in-situ metal barrier layer within the dielectric layer exposed periphery. A metal plug is formed within the via hole wherein the in-situ metal barrier layer prevents diffusion of the metal from the metal plug into the dielectric oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.