Ruthenium bias compensation layer for spin valve head and process of manufacturing
US6396671B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2000 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Mar 15, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49044
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A spin valve structure, and method for manufacturing it, are described. The valve is subject to only small bias point shifts by sense current fields while at the same time has good GMR characteristics. This is achieved by introducing a layer of about 15 Angstroms of ruthenium between the seed layer and the free layer. This acts as an effective bias control layer with the added benefit of providing interfaces (to both the seed and the free layer) that are highly favorable to specular reflection of the conduction electrons. The HCP crystal structure of this ruthenium layer also improves the crystalline quality of the free layer thereby improving its performance with respect to the GMR ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.