Plasma reactor with heated source of a polymer-hardening precursor material
US6440866B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2000 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Jun 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3382
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.