Method to create a copper diffusion deterrent interface
US6683002B1 · kind B1 · utility
29Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2000 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Jan 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method and product for forming a dual damascene interconnect structure, wherein depositing a copper sulfide interface layer as sidewalls to the opening deters migration or diffusing of copper ions into the dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.