Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding
US6720204B2 · kind B2 · utility
23Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2002 |
| Grant date | Apr 13, 2004 |
| Priority date | — |
| Expiry date | Apr 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of bonding a wire to a metal bonding pad, comprising the following steps. A semiconductor die structure having an exposed metal bonding pad within a chamber is provided. The bonding pad has an upper surface. A hydrogen-plasma is produced within the chamber from a plasma source. The metal bonding pad is pre-cleaned and passivated with the hydrogen-plasma to remove any metal oxide formed on the metal bonding pad upper surface. A wire is then bonded to the passivated metal bonding pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.