Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates

US6740539B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• Infineon Technologies AG · DE

Inventors

• Richard A. Conti · Altamont, US
• Prakash Dev · Plano, US
• David M. Dobuzinsky · New Windsor, US
• Daniel C. Edelstein · White Plains, US
• Gill Yong Lee · San Jose, US
• Kia-Seng Low · Hopewell Junction, US
• Padraic Shafer · Beacon, US
• Alexander William Simpson · Wappingers Falls, US
• Peter Wrschka · Phoenix, US

Key dates

• Filing date: Feb 13, 2003
• Grant date: May 25, 2004
• Expiry date: Feb 13, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3.3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.