Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor
US6857180B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2002 |
| Grant date | Feb 22, 2005 |
| Priority date | — |
| Expiry date | Aug 27, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.