CVD organic polymer film for advanced gate patterning

US6864556B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Lu You · Santa Clara, US
• Marina V. Plat · San Jose, US
• Chih-Yuh Yang · San Jose, US
• Scott A. Bell · San Jose, US
• Richard J. Huang · Cupertino, US
• Christopher F. Lyons · Fremont, US
• Mark S. Chang · Los Altos, US
• Marilyn I. Wright · Austin, US

Key dates

• Filing date: Dec 31, 2002
• Grant date: Mar 8, 2005
• Expiry date: Mar 28, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A bottom anti-reflective coating comprising an organic polymer layer having substantially no nitrogen and a low compressive stress in relation to a polysilicon layer is employed as the lower layer of a bi-layer antireflective coating/hardmask structure to reduce deformation of a pattern to be formed in a patternable layer. The organic polymer layer is substantially transparent to visible radiation, enabling better detection of alignment marks during a semiconductor device fabrication process and improving overlay accuracy. The organic polymer layer provides excellent step coverage and may be advantageously used in the fabrication of structures such as FinFETs.