Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal

US7078302B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Yi Ma · Orlando, US
• Khaled Ahmed · Anaheim, US
• Kevin Cunningham · Mountain View, US
• Robert C. McIntosh · Brewster, US
• Abhilash J. Mayur · Salinas, US
• Haifan Liang · Fremont, US
• Mark Yam · Monte Sereno, US
• Toi Yue Becky Leung · San Jose, US
• Christopher S. Olsen · Fremont, US
• Shulin Wang · Campbell, US
• Majeed A. Foad · Sunnyvale, US
• Gary E. Miner · Fremont, US

Key dates

• Filing date: Feb 23, 2004
• Grant date: Jul 18, 2006
• Expiry date: Jul 17, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/324
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.