Line level air gaps
US7084479B2 · kind B2 · utility
16Cited by
23References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2003 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Mar 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.