Bilayered metal hardmasks for use in dual damascene etch schemes

US7241681B2 · kind B2 · utility

Assignees

• Infineon Technologies AG · DE
• International Business Machines Corporation · US

Inventors

• Kaushik A. Kumar · Heverlee, BE
• Lawrence A. Clevenger · Saratoga Springs, US
• Timothy J. Dalton · Ridgefield, US
• Douglas C. La Tulipe, Jr. · Albany, US
• Andy Cowley · Wappingers Falls, US
• Erdem Kaltalioglu · Newburgh, US
• Jochen Schacht · Hsinchu, TW
• Andrew H. Simon · Fishkill, US
• Mark Hoinkis · Fishkill, US
• Steffen K. Kaldor · Fishkill, US
• Chih-Chao Yang · Glenmont, US

Key dates

• Filing date: Jan 12, 2006
• Grant date: Jul 10, 2007
• Expiry date: Jan 12, 2026

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/31678
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue deposits. The metal hardmask comprises a first or primary layer of TiN (titanium nitride) and a second or capping layer of TaN (tantalum nitride).