Formation of composite tungsten films

US7384867B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Ken Kaung Lai · Milpitas, US
• Jeong Soo Byun · Cupertino, US
• Frederick Wu · Cupertino, US
• Ramanujapuran A. Srinivas · San Jose, US
• Avgerinos V. Gelatos · Scotts Valley, US
• Mei Chang · San Jose, US
• Moris Kori · Palo Alto, US
• Ashok Sinha · Palo Alto, US
• Hua Chung · San Jose, US
• Hongbin Fang · Loomis, US
• Alfred Mak · Union City, US
• Michael Yang · Fremont, US
• Ming Xi · Palo Alto, US

Key dates

• Filing date: Aug 18, 2005
• Grant date: Jun 10, 2008
• Expiry date: Jul 28, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.