Formation of composite tungsten films

US7605083B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Ken Kaung Lai · Milpitas, US
• Jeong Soo Byun · Cupertino, US
• Frederick Wu · Cupertino, US
• Ramanujapuran A. Srinivas · San Jose, US
• Avgerinos V. Gelatos · Scotts Valley, US
• Mei Chang · San Jose, US
• Moris Kori · Palo Alto, US
• Ashok Sinha · Palo Alto, US
• Hua Chung · San Jose, US
• Hongbin Fang · Loomis, US
• Alfred Mak · Union City, US
• Michael Yang · Fremont, US
• Ming Xi · Palo Alto, US

Key dates

• Filing date: May 28, 2008
• Grant date: Oct 20, 2009
• Expiry date: May 28, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 Å, such as about 15 Å. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.