Internal balanced coil for inductively coupled high density plasma processing chamber
US7789993B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2007 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Nov 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.