Twisted dual-substrate orientation (DSO) substrates

US7803670B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Ted R. White · Austin, US
• Leo Mathew · Austin, US
• Bich-Yen Nguyen · Austin, US
• Zhonghai Shi · Austin, US
• Voon-Yew Thean · Fishkill, US
• Mariam Sadaka · Austin, US

Key dates

• Filing date: Jul 20, 2006
• Grant date: Sep 28, 2010
• Expiry date: Jan 3, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6211
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor process and apparatus provide a dual or hybrid substrate by forming a second semiconductor layer (214) that is isolated from, and crystallographically rotated with respect to, an underlying first semiconductor layer (212) by a buried insulator layer (213); forming an STI region (218) in the second semiconductor layer (214) and buried insulator layer (213); exposing the first semiconductor layer (212) in a first area (219) of a STI region (218); epitaxially growing a first epitaxial semiconductor layer (220) from the exposed first semiconductor layer (212); and selectively etching the first epitaxial semiconductor layer (220) and the second semiconductor layer (214) to form CMOS FinFET channel regions (e.g., 223) and planar channel regions (e.g., 224) from the first epitaxial semiconductor layer (220) and the second semiconductor layer (214).