Damascene metal-insulator-metal (MIM) device
US8089113B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2006 |
| Grant date | Jan 3, 2012 |
| Priority date | — |
| Expiry date | Aug 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
Abstract
The present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening in the dielectric layer, providing a switching body in the opening, and providing a second conductive body in the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.