Process to fabricate bottom electrode for MRAM device
US8273666B2 · kind B2 · utility
2Cited by
8References
9Claims
0Family size
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Key dates
| Filing date | Nov 19, 2010 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Nov 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.