Yttrium and titanium high-k dielectric films

US8278735B2 · kind B2 · utility

Assignee

• INTERMOLECULAR, INC. · US

Inventors

• Imran Hashim · Saratoga, US
• Indranil De · Alameda, US
• Tony P. Chiang · Campbell, US
• Edward Haywood · San Jose, US
• Hanhong Chen · Milpitas, US
• Nobi Fuchigami · Santa Clara, US
• Pragati Kumar · Santa Clara, US
• Sandra G. Malhotra · San Jose, US
• Sunil Shanker · Santa Clara, US

Key dates

• Filing date: Oct 8, 2010
• Grant date: Oct 2, 2012
• Expiry date: Jan 11, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.