Nonvolatile memory element including resistive switching metal oxide layers

US8294219B2 · kind B2 · utility

Assignee

• INTERMOLECULAR, INC. · US

Inventors

• Sandra G. Malhotra · San Jose, US
• Pragati Kumar · Santa Clara, US
• Sean Barstow · San Jose, US
• Tony P. Chiang · Campbell, US
• Prashant B. Phatak · San Jose, US
• Wen Wu · Pleasanton, US
• Sunil Shanker · Santa Clara, US

Key dates

• Filing date: Jul 24, 2008
• Grant date: Oct 23, 2012
• Expiry date: Dec 18, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/80

Abstract

Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.