Methods of forming conductive vias

US8324100B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Salman Akram · Boise, US
• William M. Hiatt · Eagle, US
• Steven Oliver · Boise, US
• Alan G. Wood · Boise, US
• Sidney B. Rigg · Meridian, US
• James M. Wark · Boise, US
• Kyle K. Kirby · Eagle, US

Key dates

• Filing date: Feb 17, 2011
• Grant date: Dec 4, 2012
• Expiry date: Feb 17, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/09701
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of forming a conductive via may include forming a blind via hole partially through a substrate, forming an aluminum film on surfaces of the substrate, removing a first portion of the aluminum film from some surfaces, selectively depositing conductive material onto a second portion of the aluminum film, and exposing the blind via hole through a back side of the substrate. Methods of fabricating a conductive via may include forming at least one via hole through at least one unplated bond pad, forming a first adhesive over at least one surface of the at least one via hole, forming a dielectric over the first adhesive, forming a base layer over the dielectric and the at least one unplated bond pad, and plating nickel onto the base layer.