Methods to mitigate plasma damage in organosilicate dielectrics
US8481423B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 19, 2007 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Feb 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.