Planarizing etch hardmask to increase pattern density and aspect ratio
US8513129B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2010 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Jun 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for manufacturing a semiconductor device are provided. In one embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and has a first set of interconnect features. The first film stack comprises a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer. The first photoresist layer is patterned by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.