Deposition of an amorphous carbon layer with high film density and high etch selectivity
US8679987B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Sep 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200° C. and about 700° C. to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.