Resistive switching devices having alloyed electrodes and methods of formation thereof

US8847192B2 · kind B2 · utility

Assignees

• Adesto Technologies France SARL · FR
• Adesto Technologies Corporation · US

Inventors

• Wei Ti Lee · San Jose, US
• Chakravarthy Gopalan · Santa Clara, US
• Yi Ma · Orlando, US
• Jeffrey A. Shields · Sunnyvale, US
• Philippe Blanchard · Saint-Fargeau-Ponthierry, FR
• John Ross Jameson · Burlingame, US
• Foroozan Sarah Koushan · San Jose, US
• Janet Wang · Los Altos, US
• Mark D. Kellam · Siler City, US

Key dates

• Filing date: Jul 25, 2012
• Grant date: Sep 30, 2014
• Expiry date: Jul 25, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8836

Abstract

In accordance with an embodiment of the present invention, a resistive switching device comprises a bottom electrode, a switching layer disposed over the bottom electrode, and a top electrode disposed over the switching layer. The top electrode comprises an alloy of a memory metal and an alloying element. The top electrode provides a source of the memory metal. The memory metal is configured to change a state of the switching layer.