Resistive switching devices having a buffer layer and methods of formation thereof

US8866122B1 · kind B1 · utility

Assignee

• Adesto Technologies Corporation · US

Inventors

• Wei Ti Lee · San Jose, US
• Chakravarthy Gopalan · Santa Clara, US
• Yi Ma · Orlando, US
• Kuei-Chang Tsai · Cupertino, US
• Jeffrey A. Shields · Sunnyvale, US
• Janet Wang · Los Altos, US

Key dates

• Filing date: Jun 14, 2012
• Grant date: Oct 21, 2014
• Expiry date: Jul 24, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8836

Abstract

In one embodiment, a resistive switching device includes a bottom electrode, a switching layer, a buffer layer, and a top electrode. The switching layer is disposed over the bottom electrode. The buffer layer is disposed over the switching layer and provides a buffer of ions of a memory metal. The buffer layer includes an alloy of the memory metal with an alloying element, which includes antimony, tin, bismuth, aluminum, germanium, silicon, or arsenic. The top electrode is disposed over the buffer layer and provides a source of the memory metal.