Patent · US Active

Electronic fuse vias in interconnect structures

US8916461B2 · kind B2 · utility

5Cited by
7References
9Claims
0Family size

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Inventors

Key dates

Filing dateSep 20, 2012
Grant dateDec 23, 2014
Priority date
Expiry dateDec 1, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An electronic fuse and method for forming the same. Embodiments of the invention include e-fuses having a first metallization level including a metal structure, a second metallization level above the first metallization level, a metal via in the second metallization level, an interface region where the metal via meets the first metallization level, and a damaged region at the interface region. Embodiments further include a method including providing a first metallization level including a metal structure, forming a capping layer on the first metallization level, forming an opening in the capping layer that exposes a portion of the metal structure; forming above the capping layer an adhesion layer contacting the metal structure, forming an insulating layer above the adhesion layer, etching the insulating layer and the adhesion layer to form a recess exposing the metal structure, and filling the fuse via recess to form a fuse via.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.