Bottom electrode for MRAM device
US8969982B2 · kind B2 · utility
4Cited by
11References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 19, 2010 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | May 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.