Semiconductor device with termination structure for power MOSFET applications
US9356022B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2015 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Jul 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may have an active device region containing a plurality of active devices and a termination structure that surrounds the active device region. The termination structure includes a first conductive region that surrounds the active device region, an insulator region that surrounds the first conductive region, and a second conductive region that surrounds the first conductive region and the insulator region. The active device region and termination structure are formed into a semiconductor material of a first conductivity type. The first conductive region is electrically connected to a gate metal and the second conductive region is connected to a drain metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.