High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices

US9450088B2 · kind B2 · utility

Assignee

• Alpha and Omega Semiconductor, Ltd. · US

Inventors

• Yeeheng Lee · San Jose, US
• Hong Chang · Saratoga, US
• Jongoh Kim · Hsinchu, TW
• Sik Lui · Sunnyvale, US
• Hamza Yilmaz · Saratoga, US
• Madhur Bobde · Sunnyvale, US
• Daniel Calafut · San Jose, US
• John Chen · Palo Alto, US

Key dates

• Filing date: Nov 10, 2015
• Grant date: Sep 20, 2016
• Expiry date: Nov 10, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/2527
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Aspects of the present disclosure describe a high density trench-based power MOSFET with self-aligned source contacts. The source contacts are self-aligned with a first insulative spacer and a second insulative spacer, wherein the first spacer is resistant to an etching process that will selectively remove the material the second spacer is made from. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.