High performance refractory metal / copper interconnects to eliminate electromigration

US9536830B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Junjing Bao · Fishkill, US
• Griselda Bonilla · Hopewell Junction, US
• Samuel S. Choi · Hopewell Junction, US
• Ronald G. Filippi · Wappingers Falls, US
• Naftali E. Lustig · Ossining, US
• Andrew H. Simon · Fishkill, US

Key dates

• Filing date: May 9, 2013
• Grant date: Jan 3, 2017
• Expiry date: Aug 24, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An interconnect structure and method of making the same. A preferred interconnect structure has a first interconnect including a first dual damascene via and narrow line and a second interconnect at the same level as the first including a second dual damascene via and wider line. The first and second interconnects may have different aspect ratio and may have different line heights while being co-planar with each other. The second line of the second interconnect may abut or partially surround the first line of the first interconnect. The first interconnect includes a refractory metal material as the main conductor, whereas the second interconnect includes a lower resistivity material as its main conductor.