Half-bridge HEMT circuit and an electronic package including the circuit

US9773895B2 · kind B2 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Balaji Padmanabhan · Chandler, US
• Prasad Venkatraman · Gilbert, US
• Peter Moens · Zottegem, BE
• Mihir Mudholkar · Tempe, US
• Joe Fulton · Ewing, US
• Philip Celaya · Gilbert, US
• Stephen St. Germain · Scottsdale, US
• Chun-Li Liu · Scottsdale, US
• Jason McDonald · Gilbert, US
• Alexander Young · Scottsdale, US
• Ali Salih · Mesa, US

Key dates

• Filing date: Apr 20, 2016
• Grant date: Sep 26, 2017
• Expiry date: Apr 20, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/84
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A half-bridge circuit can include a high-side HEMT, a high-side switch transistor, a low-side HEMT, and a low-side switch transistor. The die substrates of the HEMTs can be coupled to the sources of their corresponding switch transistors. In another aspect, a packaged electronic device for a half-bridge circuit can have a design that can use shorter connectors that help to reduce parasitic inductance and resistance. In a further aspect, a packaged electronic device for a half-bridge circuit can include more than one connection along the bottom of the package allows less lead connections along the periphery of the packaged electronic device and can allow for a smaller package.