Semiconductor device and method of forming the semiconductor device

US9917196B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Marc A. Bergendahl · Troy, US
• Gauri Karve · Cohoes, US
• Fee Li Lie · Albany, US
• Eric R. Miller · Schenectady, US
• Robert R. Robison · Colchester, US
• John R. Sporre · Albany, US
• Sean Teehan · Rensselaer, US

Key dates

• Filing date: Oct 14, 2016
• Grant date: Mar 13, 2018
• Expiry date: Oct 14, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6757

Abstract

A semiconductor device includes a fin structure comprising a cylindrical shape and including a recess formed in an upper surface of the fin structure, an inner gate formed inside the fin structure, an outer gate formed outside the fin structure, and a conductor formed in the recess and connecting the inner and outer gates.