Tall single-fin fin-type field effect transistor structures and methods

US9929157B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Ruilong Xie · Niskayuna, US
• Andreas Knorr · Saratoga Springs, US
• Murat Kerem Akarvardar · Saratoga Springs, US
• Lars Liebmann · Poughquag, US
• Nigel G. Cave · Austin, US

Key dates

• Filing date: Dec 22, 2016
• Grant date: Mar 27, 2018
• Expiry date: Dec 22, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853

Abstract

Disclosed are methods of forming improved fin-type field effect transistor (FINFET) structures and, particularly, relatively tall single-fin FINFET structures that provide increased drive current over conventional single-fin FINFET structures. The use of such a tall single-fin FINFET provides significant area savings over a FINFET that requires multiple semiconductor fins to achieve the same amount of drive current. Furthermore, since only a single fin is used, only a single leakage path is present at the bottom of the device. Thus, the disclosed FINFET structures can be incorporated into a cell in place of multi-fin FINFETs in order to allow for cell height scaling without violating critical design rules or sacrificing performance.