Hidemitsu Mori
13Patents
6h-index
12Co-inventors
59Inventor score
Filing activity: Nov 8, 1996 → Oct 27, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8148774B2 | Method of fabricating semiconductor device with a high breakdown voltage between neighboring wells | Electricity | 116 | Active |
| US6030894A | Method for manufacturing a semiconductor device having contact plug made of Si/SiGe/Si | Electricity | 76 | Expired |
| US5808365A | Semiconductor device and method of manufacturing the same | Electricity | 31 | Expired |
| US5895948A | Semiconductor device and fabrication process thereof | Electricity | 20 | Expired |
| US5909059A | Semiconductor device having contact plug and method for manufacturing the same | Electricity | 19 | Expired |
| US5838036A | Semiconductor memory device capable of realizing a minimum memory cell area approximate to a theoretical value | Electricity | 13 | Expired |
| US6162676A | Method of making a semiconductor device with an etching stopper | Electricity | 6 | Expired |
| US6127231A | Method of making transistors in an IC including memory cells | Electricity | 6 | Expired |
| US6534358B2 | Method of fabricating semiconductor device having ferroelectric capacitor | Electricity | 6 | Expired |
| US6730955B2 | Semiconductor memory and process for fabricating the same | Electricity | 6 | Expired |
| US6384440B1 | Ferroelectric memory including ferroelectric capacitor, one of whose electrodes is connected to metal silicide film | Electricity | 4 | Expired |
| US6887752B2 | Semiconductor memory and process for fabricating the same | Electricity | 3 | Expired |
| US5946570A | Process for fabricating semiconductor device having semiconductor layers epitaxially grown from active areas without short-circuit on field insulating layer | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.