Plasma reactor using inductive RF coupling, and processes

US6518195B1 · kind B1 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Kenneth S. Collins · San Jose, US
• Chan-Lon Yang · Los Gatos, US
• Jerry Wong · Fremont, US
• Jeffrey Marks · San Jose, US
• Peter Keswick · Bloomington, US
• David W. Groechel · Los Altos Hills, US
• Craig A. Roderick · San Jose, US
• John Trow · San Jose, US
• Tetsuya Ishikawa · Fuji, JP
• Jay D. Pinson, II · San Jose, US
• Lawrence Chang-Lai Lei · Cupertino, US
• Masato Toshima · Sunnyvale, US
• Gerald Yin · Cupertino, US

Key dates

• Filing date: Feb 15, 2000
• Grant date: Feb 11, 2003
• Expiry date: Feb 15, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01F2029/143
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.