Zen-Jay Tsai
10Patents
2h-index
15Co-inventors
47Inventor score
Filing activity: Jul 16, 2010 → Jun 7, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8278166B2 | Method of manufacturing complementary metal oxide semiconductor device | Electricity | 12 | Active |
| US8841181B2 | Method for fabricating semiconductor device and PMOS device fabricated by the method | Electricity | 4 | Active |
| US8709930B2 | Semiconductor process | Electricity | 2 | Active |
| US11626515B2 | High voltage semiconductor device including buried oxide layer and method for forming the same | Electricity | 0 | Active |
| US11869953B2 | High voltage transistor device and method for fabricating the same | Electricity | 0 | Active |
| US11721702B2 | Fabrication method of fin transistor | Electricity | 0 | Active |
| US11417685B2 | Fin transistor structure and fabrication method thereof | Electricity | 0 | Active |
| US12040396B2 | High voltage semiconductor device including buried oxide layer | Electricity | 0 | Active |
| US11476343B2 | High voltage transistor device and method for fabricating the same | Electricity | 0 | Active |
| US12328898B2 | High voltage semiconductor device including buried oxide layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.