PECVD apparatus and process

US10030306B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Nagarajan Rajagopalan · Santa Clara, US
• Xinhai Han · Santa Clara, US
• Michael Wenyoung Tsiang · Milpitas, US
• Masaki Ogata · San Jose, US
• Zhijun Jiang · Sunnyvale, US
• Juan Carlos Rocha-Alvarez · Redwood City, US
• Thomas Nowak · Cupertino, US
• Jianhua Zhou · Campbell, US
• Ramprakash Sankarakrishnan · Santa Clara, US
• Ganesh Balasubramanian · Sunnyvale, US
• Amit Kumar BANSAL · Milpitas, US
• Jeongmin Lee · San Ramon, US
• Todd Egan · Fremont, US
• Edward W. Budiarto · Fremont, US
• Dmitriy Panasyuk · Santa Clara, US
• Terrance Y. Lee · Oakland, US
• Jian J. Chen · Fremont, US
• Mohamad A. Ayoub · Los Gatos, US
• Heung Lak Park · San Jose, US
• Patrick Reilly · Pleasanton, US
• Shahid Shaikh · Houston, US
• Bok Hoen Kim · San Jose, US
• Sergey Starik · Horlivka, UA

Key dates

• Filing date: Oct 23, 2013
• Grant date: Jul 24, 2018
• Expiry date: Feb 8, 2035

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N2201/1222
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.