Gas flow profile modulated control of overlay in plasma CVD films
US10373822B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Nov 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.