Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system
US10403535B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2015 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | May 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02N13/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.